BC849W Bipolar Transistor

Characteristics of BC849W Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC849W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC849W transistor can have a current gain of 110 to 800. The gain of the BC849AW will be in the range from 110 to 220, for the BC849BW it will be in the range from 200 to 450, for the BC849CW it will be in the range from 420 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC849W is the BC859W.

Replacement and Equivalent for BC849W transistor

You can replace the BC849W with the BC847W, BC848W or BC850W.
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