BC558C Bipolar Transistor

Characteristics of BC558C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of BC558C

The BC558C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC558C transistor can have a current gain of 420 to 800. The gain of the BC558 will be in the range from 110 to 800, for the BC558A it will be in the range from 110 to 220, for the BC558B it will be in the range from 200 to 450.

Complementary NPN transistor

The complementary NPN transistor to the BC558C is the BC548C.

SMD Version of BC558C transistor

The BC858 (SOT-23), BC858C (SOT-23), BC858CW (SOT-323), BC858W (SOT-323), BC859 (SOT-23), BC859C (SOT-23), BC859CW (SOT-323) and BC859W (SOT-323) is the SMD version of the BC558C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC558C transistor

You can replace the BC558C with the BC251, BC251C, BC307, BC307C, BC415, BC415C, BC416, BC416C, BC557, BC557C, BC559, BC559C, BC560 or BC560C.
If you find an error please send an email to mail@el-component.com