BC558 Bipolar Transistor

Characteristics of BC558 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of BC558

The BC558 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC558 transistor can have a current gain of 110 to 800. The gain of the BC558A will be in the range from 110 to 220, for the BC558B it will be in the range from 200 to 450, for the BC558C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC558 is the BC548.

SMD Version of BC558 transistor

The BC858 (SOT-23), BC858W (SOT-323), BC859 (SOT-23) and BC859W (SOT-323) is the SMD version of the BC558 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC558 transistor

You can replace the BC558 with the BC557, BC559 or BC560.
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