2SD1271-P Bipolar Transistor

Characteristics of 2SD1271-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 130 to 260
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1271-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1271-P transistor can have a current gain of 130 to 260. The gain of the 2SD1271 will be in the range from 60 to 260, for the 2SD1271-Q it will be in the range from 90 to 180, for the 2SD1271-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1271-P might only be marked "D1271-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1271-P is the 2SB946-P.

Replacement and Equivalent for 2SD1271-P transistor

You can replace the 2SD1271-P with the 2SD866, 2SD866-P, 2SD866A, 2SD866A-P, BD537, BD543B, BD543C, BD545B, BD545C, BD799, BD801, BD809, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDX77, D44H11, D44H11FP, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030 or MJF15030G.
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