2SD1252-P Bipolar Transistor

Characteristics of 2SD1252-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 120 to 250
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1252-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1252-P transistor can have a current gain of 120 to 250. The gain of the 2SD1252 will be in the range from 40 to 250, for the 2SD1252-Q it will be in the range from 70 to 150, for the 2SD1252-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1252-P might only be marked "D1252-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1252-P is the 2SB929-P.

SMD Version of 2SD1252-P transistor

The BDP949 (SOT-223) is the SMD version of the 2SD1252-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1252-P transistor

You can replace the 2SD1252-P with the 2SD1221, 2SD1252A, 2SD1252A-P, 2SD1253, 2SD1253-P, 2SD1253A, 2SD1253A-P, 2SD1254, 2SD1255, 2SD1256, 2SD1257, 2SD1257A or KTC2020D.
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