2SD1256 Bipolar Transistor

Characteristics of 2SD1256 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 60 to 260
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1256

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1256 transistor can have a current gain of 60 to 260. The gain of the 2SD1256-P will be in the range from 130 to 260, for the 2SD1256-Q it will be in the range from 90 to 180, for the 2SD1256-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1256 might only be marked "D1256".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1256 is the 2SB933.

Replacement and Equivalent for 2SD1256 transistor

You can replace the 2SD1256 with the 2SD1257 or 2SD1257A.
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