2SD1221 Bipolar Transistor

Characteristics of 2SD1221 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 300
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1221

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1221 transistor can have a current gain of 60 to 300. The gain of the 2SD1221-GR will be in the range from 150 to 300, for the 2SD1221-O it will be in the range from 60 to 120, for the 2SD1221-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1221 might only be marked "D1221".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1221 is the 2SB906.
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