KTC2020D Bipolar Transistor

Characteristics of KTC2020D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of KTC2020D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC2020D transistor can have a current gain of 100 to 300. The gain of the KTC2020D-GR will be in the range from 150 to 300, for the KTC2020D-Y it will be in the range from 100 to 200.

Complementary PNP transistor

The complementary PNP transistor to the KTC2020D is the KTA1040D.

SMD Version of KTC2020D transistor

The BDP949 (SOT-223) is the SMD version of the KTC2020D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTC2020D transistor

You can replace the KTC2020D with the 2SD1221.
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