2SD1252A Bipolar Transistor

Characteristics of 2SD1252A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 40 to 250
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of 2SD1252A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1252A transistor can have a current gain of 40 to 250. The gain of the 2SD1252A-P will be in the range from 120 to 250, for the 2SD1252A-Q it will be in the range from 70 to 150, for the 2SD1252A-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1252A might only be marked "D1252A".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1252A is the 2SB929A.

SMD Version of 2SD1252A transistor

The BDP951 (SOT-223) is the SMD version of the 2SD1252A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD1252A transistor

You can replace the 2SD1252A with the 2SD1253A.
If you find an error please send an email to mail@el-component.com