2SB947A-Q Bipolar Transistor

Characteristics of 2SB947A-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 90 to 180
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB947A-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB947A-Q transistor can have a current gain of 90 to 180. The gain of the 2SB947A will be in the range from 60 to 260, for the 2SB947A-P it will be in the range from 130 to 260, for the 2SB947A-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB947A-Q might only be marked "B947A-Q".

Replacement and Equivalent for 2SB947A-Q transistor

You can replace the 2SB947A-Q with the 2SA1291, 2SA1328, 2SA1329, 2SA1451, 2SA1451A, 2SA1452, 2SA1452A, 2SA1471, 2SB1136, 2SB826, 2SB948A, 2SB948A-Q, BD546, BD546A, BD546B, BD808, BD810, BDT82, BDT82F, BDT84, BDT84F, BDT92, BDT92F, BDT94, BDT94F, D45H11, D45H11FP or D45H8.
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