2SB947A-R Bipolar Transistor

Characteristics of 2SB947A-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB947A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB947A-R transistor can have a current gain of 60 to 120. The gain of the 2SB947A will be in the range from 60 to 260, for the 2SB947A-P it will be in the range from 130 to 260, for the 2SB947A-Q it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB947A-R might only be marked "B947A-R".

Replacement and Equivalent for 2SB947A-R transistor

You can replace the 2SB947A-R with the 2N6489, 2N6489G, 2N6490, 2N6490G, 2N6491, 2N6491G, 2SB948A, 2SB948A-R, BD546, BD546A, BD546B, BD706, BD708, BD710, BD744, BD744A, BD744B, BD808, BD810, BD906, BD908, BD910, BDT82, BDT82F, BDT84, BDT84F, BDT92, BDT92F, BDT94, BDT94F, D45H11, D45H11FP or D45H8.
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