2SB919-R Bipolar Transistor

Characteristics of 2SB919-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB919-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB919-R transistor can have a current gain of 100 to 200. The gain of the 2SB919 will be in the range from 70 to 280, for the 2SB919-Q it will be in the range from 70 to 140, for the 2SB919-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB919-R might only be marked "B919-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB919-R is the 2SD1235-R.

Replacement and Equivalent for 2SB919-R transistor

You can replace the 2SB919-R with the 2SA1291, 2SA1291-R, 2SA1328, 2SA1451, 2SA1451A, 2SA1471, 2SA1471-R, 2SA1743, 2SA1743-M, 2SA1744, 2SA1744-M, 2SB1136, 2SB1136-R, 2SB826, 2SB826-R, 2SB903, 2SB903-R, 2SB947A, 2SB948A, BD202, BD204, BD302, BD304, BD534, BD536, BD544, BD544A, BD546, BD546A, BD796, BD798, BD808, BDT82, BDT82F, BDT92, BDT92F or D45H8.
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