2SB1136-R Bipolar Transistor

Characteristics of 2SB1136-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1136-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1136-R transistor can have a current gain of 100 to 200. The gain of the 2SB1136 will be in the range from 70 to 280, for the 2SB1136-Q it will be in the range from 70 to 140, for the 2SB1136-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1136-R might only be marked "B1136-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1136-R is the 2SD1669-R.

Replacement and Equivalent for 2SB1136-R transistor

You can replace the 2SB1136-R with the 2SA1328, 2SA1329, 2SA1451, 2SA1451A, 2SA1452, 2SA1452A, 2SA1744, 2SA1744-M, 2SB826, 2SB826-R, BD546A, BD546B, BD546C, BDT82, BDT82F, BDT84, BDT84F, BDT86 or BDT86F.
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