2SB559-E Bipolar Transistor

Characteristics of 2SB559-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -18 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.2 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB559-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB559-E transistor can have a current gain of 100 to 200. The gain of the 2SB559 will be in the range from 60 to 320, for the 2SB559-D it will be in the range from 60 to 120, for the 2SB559-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB559-E might only be marked "B559-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SB559-E is the 2SD439-E.

SMD Version of 2SB559-E transistor

The BCX69 (SOT-89) and BCX69-16 (SOT-89) is the SMD version of the 2SB559-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB559-E transistor

You can replace the 2SB559-E with the 2SA1120, 2SA1357, 2SA1357-O, 2SA715, 2SA715-C, 2SA738, 2SB1009, 2SB1127, 2SB1127-R, 2SB1140, 2SB1140-R, 2SB1141, 2SB1141-R, 2SB743, 2SB743-Q, 2SB772, 2SB772O, 2SB772Q, BD186, KSB772, KSB772-O, KSH772, KSH772-O, KTA1705, KTB772, KTB772-O or MJE370.
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