2SB1127-R Bipolar Transistor
Characteristics of 2SB1127-R Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -20 V
- Collector-Base Voltage, max: -25 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 320 MHz
- Operating and Storage Junction Temperature Range: -55 to +125 °C
- Package: TO-126
Pinout of 2SB1127-R
Classification of hFE
Marking
Replacement and Equivalent for 2SB1127-R transistor
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