2SB559-D Bipolar Transistor

Characteristics of 2SB559-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -18 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.2 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB559-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB559-D transistor can have a current gain of 60 to 120. The gain of the 2SB559 will be in the range from 60 to 320, for the 2SB559-E it will be in the range from 100 to 200, for the 2SB559-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB559-D might only be marked "B559-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB559-D is the 2SD439-D.

Replacement and Equivalent for 2SB559-D transistor

You can replace the 2SB559-D with the 2SA715, 2SA715-B, 2SA738, 2SB743, 2SB743-R, 2SB772, 2SB772R, BD186, BD434, BD434G, BD436, BD436G, KSB772, KSB772-R, KSE210, KSH772, KSH772-R, MJE210, MJE210G or MJE370.
If you find an error please send an email to mail@el-component.com