2SD401A-M Bipolar Transistor

Characteristics of 2SD401A-M Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD401A-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD401A-M transistor can have a current gain of 40 to 80. The gain of the 2SD401A will be in the range from 40 to 200, for the 2SD401A-K it will be in the range from 100 to 200, for the 2SD401A-L it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD401A-M might only be marked "D401A-M".

Complementary PNP transistor

The complementary PNP transistor to the 2SD401A-M is the 2SB546A-M.

Replacement and Equivalent for 2SD401A-M transistor

You can replace the 2SD401A-M with the 2SD401, 2SD401-R, 2SD402, 2SD610, 2SD610-S, 2SD772, 2SD772A, 2SD772B, 2SD792, 2SD792A, 2SD792B, MJE15030, MJE15030G, MJE5182, MJF15030, MJF15030G, TIP41F or TIP42F.
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