NTE2329 Bipolar Transistor

Characteristics of NTE2329 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 55 to 160
  • Transition Frequency, min: 25 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P
  • These Devices are Pb-Free and are RoHS Compliant

Pinout of NTE2329

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the NTE2329 is the NTE2328.

Replacement and Equivalent for NTE2329 transistor

You can replace the NTE2329 with the 2SA1302, 2SA1943, 2SA1962, 2SA1986, 2SA2121, 2SA2151, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, FJA4213, FJL4215, KTA1943, KTA1943A, KTA1962, KTA1962A, MJW1302A or MJW1302AG.
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