2SB1144-Q Bipolar Transistor

Characteristics of 2SB1144-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1144-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1144-Q transistor can have a current gain of 100 to 200. The gain of the 2SB1144 will be in the range from 100 to 400, for the 2SB1144-S it will be in the range from 140 to 280, for the 2SB1144-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1144-Q might only be marked "B1144-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1144-Q is the 2SD1684-Q.

SMD Version of 2SB1144-Q transistor

The 2SA1201 (SOT-89) and KTA1661 (SOT-89) is the SMD version of the 2SB1144-Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1144-Q transistor

You can replace the 2SB1144-Q with the 2SA1021, 2SA1021-O, 2SA1249, 2SA1249-R, 2SA1408, 2SA1408-O, 2SA1507, 2SA1507-R, 2SB1167, 2SB1167-R, 2SB1168, 2SB1168-R, 2SB649, 2SB649-C, 2SB649A, 2SB649A-C, BD792, KTA1700 or MJE254.
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