2SB649A-C Bipolar Transistor

Characteristics of 2SB649A-C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB649A-C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB649A-C transistor can have a current gain of 100 to 200. The gain of the 2SB649A will be in the range from 60 to 200, for the 2SB649A-B it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB649A-C might only be marked "B649A-C".

Complementary NPN transistor

The complementary NPN transistor to the 2SB649A-C is the 2SD669A-C.

Replacement and Equivalent for 2SB649A-C transistor

You can replace the 2SB649A-C with the 2SA1249, 2SA1249-R, 2SA1507, 2SA1507-R or KTA1700.
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