2SB1144-T Bipolar Transistor

Characteristics of 2SB1144-T Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1144-T

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1144-T transistor can have a current gain of 200 to 400. The gain of the 2SB1144 will be in the range from 100 to 400, for the 2SB1144-Q it will be in the range from 100 to 200, for the 2SB1144-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1144-T might only be marked "B1144-T".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1144-T is the 2SD1684-T.

Replacement and Equivalent for 2SB1144-T transistor

You can replace the 2SB1144-T with the 2SA1249, 2SA1249-T, 2SA1507, 2SA1507-T, 2SB1167, 2SB1167-T, 2SB1168, 2SB1168-T or MJE254.
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