2SB1167 Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -100 V
• Collector-Base Voltage, max: -120 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -3 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 70 to 400
• Transition Frequency, min: 130 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The 2SB1167 transistor can have a current gain of 70 to 400. The gain of the 2SB1167-Q will be in the range from 70 to 140, for the 2SB1167-R it will be in the range from 100 to 200, for the 2SB1167-S it will be in the range from 140 to 280, for the 2SB1167-T it will be in the range from 200 to 400.Sometimes the "2S" prefix is not marked on the package - the 2SB1167 might only be marked "B1167".The complementary NPN transistor to the 2SB1167 is the 2SD1724.The BDP954 (SOT-223) and BDP956 (SOT-223) is the SMD version of the 2SB1167 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2SB1167 with the 2SB1168 or MJE254.