2SB1142-S Bipolar Transistor

Characteristics of 2SB1142-S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 140 to 280
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1142-S

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1142-S transistor can have a current gain of 140 to 280. The gain of the 2SB1142 will be in the range from 100 to 400, for the 2SB1142-R it will be in the range from 100 to 200, for the 2SB1142-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1142-S might only be marked "B1142-S".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1142-S is the 2SD1682-S.

SMD Version of 2SB1142-S transistor

The 2SB1123 (SOT-89) and 2SB1123-S (SOT-89) is the SMD version of the 2SB1142-S transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1142-S transistor

You can replace the 2SB1142-S with the 2SB1143, 2SB1143-S, 2SB1165, 2SB1165-S, 2SB1166, 2SB1166-S, 2SB1167, 2SB1167-S, 2SB1168, 2SB1168-S, 2SB744A, 2SB986, 2SB986-S, BD190, KSB744A, MJE235, MJE252 or MJE254.
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