MJE210G Bipolar Transistor

Characteristics of MJE210G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 45 to 180
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The MJE210G is the lead-free version of the MJE210 transistor

Pinout of MJE210G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE210G transistor

You can replace the MJE210G with the KSE210 or MJE210.
If you find an error please send an email to mail@el-component.com