2SA991P Bipolar Transistor

Characteristics of 2SA991P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-92

Pinout of 2SA991P

The 2SA991P is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA991P transistor can have a current gain of 200 to 400. The gain of the 2SA991 will be in the range from 200 to 800, for the 2SA991E it will be in the range from 400 to 800, for the 2SA991F it will be in the range from 300 to 600.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA991P might only be marked "A991P".

Complementary NPN transistor

The complementary NPN transistor to the 2SA991P is the 2SC1844P.

Replacement and Equivalent for 2SA991P transistor

You can replace the 2SA991P with the 2SA1049, 2SA1049-GR, 2SA1269, 2SA1269-GR, 2SA1285, 2SA1316, 2SA1316-GR, 2SA1450, 2SA1450-T, 2SA953, 2SA953-K, 2SA954, 2SA954-K, 2SA970, 2SA970-GR, 2SB1116A, 2SB1116A-K, 2SB560, 2SB726, KSA708C, KSB1116A or KSB1116A-G.
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