2SA1316-GR Bipolar Transistor

Characteristics of 2SA1316-GR Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-92

Pinout of 2SA1316-GR

The 2SA1316-GR is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1316-GR transistor can have a current gain of 200 to 400. The gain of the 2SA1316 will be in the range from 200 to 700, for the 2SA1316-BL it will be in the range from 350 to 700.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1316-GR might only be marked "A1316-GR".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1316-GR is the 2SC3329-GR.

Replacement and Equivalent for 2SA1316-GR transistor

You can replace the 2SA1316-GR with the 2SA1049, 2SA1049-GR, 2SA1269, 2SA1269-GR, 2SA1285, 2SA1285A, 2SA1319, 2SA1319-T, 2SA1450, 2SA1450-T, 2SA954, 2SA954-K, 2SA970, 2SA970-GR, 2SB560, 2SB726, KSA709C or KSA709CG.
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