2SA991E Bipolar Transistor

Characteristics of 2SA991E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-92

Pinout of 2SA991E

The 2SA991E is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA991E transistor can have a current gain of 400 to 800. The gain of the 2SA991 will be in the range from 200 to 800, for the 2SA991F it will be in the range from 300 to 600, for the 2SA991P it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA991E might only be marked "A991E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA991E is the 2SC1844E.

Replacement and Equivalent for 2SA991E transistor

You can replace the 2SA991E with the 2SA1025, 2SA1025-E, 2SA1081, 2SA1081-E, 2SA1082, 2SA1082-E, 2SA1083, 2SA1083-E, 2SA1084, 2SA1084-E, 2SA1085, 2SA1085-E, 2SA1285 or 2SA1285-G.
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