2SA872A-E Bipolar Transistor

Characteristics of 2SA872A-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 120 MHz
  • Noise Figure, max: 5 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA872A-E

The 2SA872A-E is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA872A-E transistor can have a current gain of 400 to 800. The gain of the 2SA872A will be in the range from 250 to 800, for the 2SA872A-D it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA872A-E might only be marked "A872A-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA872A-E is the 2SC1775A-E.

SMD Version of 2SA872A-E transistor

The FJV992 (SOT-23) and FJV992-E (SOT-23) is the SMD version of the 2SA872A-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA872A-E transistor

You can replace the 2SA872A-E with the 2SA1016K, 2SA1082, 2SA1082-E, 2SA1085, 2SA1085-E, 2SA1285, 2SA1285-G, 2SA1285A, 2SA992, 2SA992E, 2SB716, 2SB716-E, KSA992 or KSA992E.
If you find an error please send an email to mail@el-component.com