2SA1285-G Bipolar Transistor

Characteristics of 2SA1285-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1285-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1285-G transistor can have a current gain of 400 to 800. The gain of the 2SA1285 will be in the range from 150 to 800, for the 2SA1285-E it will be in the range from 150 to 300, for the 2SA1285-F it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1285-G might only be marked "A1285-G".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1285-G is the 2SC3245-G.

SMD Version of 2SA1285-G transistor

The FJV992 (SOT-23) and FJV992-E (SOT-23) is the SMD version of the 2SA1285-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1285-G transistor

You can replace the 2SA1285-G with the 2SA1082, 2SA1082-E, 2SA1085, 2SA1085-E or 2SA1285A.
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