FJV992-E Bipolar Transistor
Characteristics of FJV992-E Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -120 V
- Collector-Base Voltage, max: -120 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.05 A
- Collector Dissipation: 0.3 W
- DC Current Gain (hfe): 400 to 800
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular 2SA992E transistor
Pinout of FJV992-E
Classification of hFE
Marking
Complementary NPN transistor
FJV992-E Transistor in TO-92 Package
Replacement and Equivalent for FJV992-E transistor
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