2SA1282-E Bipolar Transistor

Characteristics of 2SA1282-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -16 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1282-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1282-E transistor can have a current gain of 150 to 300. The gain of the 2SA1282 will be in the range from 150 to 800, for the 2SA1282-F it will be in the range from 250 to 500, for the 2SA1282-G it will be in the range from 400 to 800.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1282-E might only be marked "A1282-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1282-E is the 2SC3242-E.

SMD Version of 2SA1282-E transistor

The 2SA1363 (SOT-89), 2SA1363-E (SOT-89) and BCX69 (SOT-89) is the SMD version of the 2SA1282-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1282-E transistor

You can replace the 2SA1282-E with the 2SA1273, 2SA1282A, 2SA1282A-E, 2SA1296, 2SA1300, 2SA928A, 2SB1068, KSA928A, KTA1273, KTA1282, KTA1296 or STB1277.
If you find an error please send an email to mail@el-component.com