2SB1068 Bipolar Transistor

Characteristics of 2SB1068 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -16 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 135 to 650
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SB1068

The 2SB1068 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1068 transistor can have a current gain of 135 to 650. The gain of the 2SB1068-K will be in the range from 200 to 400, for the 2SB1068-L it will be in the range from 135 to 270, for the 2SB1068-U it will be in the range from 300 to 650.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1068 might only be marked "B1068".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1068 is the 2SD1513.
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