STB1277 Bipolar Transistor

Characteristics of STB1277 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 100 to 320
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of STB1277

The STB1277 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The STB1277 transistor can have a current gain of 100 to 320. The gain of the STB1277-O will be in the range from 100 to 200, for the STB1277-Y it will be in the range from 160 to 320.

SMD Version of STB1277 transistor

The 2SA1203 (SOT-89), FMMT549 (SOT-23) and KTA1663 (SOT-89) is the SMD version of the STB1277 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for STB1277 transistor

You can replace the STB1277 with the 2SA1273, 2SA928A, 2SB1229, 2SB892, 2SB985, KSA928A, KTA1273 or KTA1282.
If you find an error please send an email to mail@el-component.com