2SA1282A-E Bipolar Transistor

Characteristics of 2SA1282A-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1282A-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1282A-E transistor can have a current gain of 150 to 300. The gain of the 2SA1282A will be in the range from 150 to 800, for the 2SA1282A-F it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1282A-E might only be marked "A1282A-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1282A-E is the 2SC3242A-E.

SMD Version of 2SA1282A-E transistor

The BCX69 (SOT-89) is the SMD version of the 2SA1282A-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1282A-E transistor

You can replace the 2SA1282A-E with the 2SA1273, 2SA1296, 2SA1300, 2SA928A, KSA928A, KTA1273, KTA1282, KTA1296 or STB1277.
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