2SA1282-G Bipolar Transistor

Characteristics of 2SA1282-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -16 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1282-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1282-G transistor can have a current gain of 400 to 800. The gain of the 2SA1282 will be in the range from 150 to 800, for the 2SA1282-E it will be in the range from 150 to 300, for the 2SA1282-F it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1282-G might only be marked "A1282-G".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1282-G is the 2SC3242-G.

SMD Version of 2SA1282-G transistor

The 2SA1363 (SOT-89) and 2SA1363-G (SOT-89) is the SMD version of the 2SA1282-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1282-G transistor

You can replace the 2SA1282-G with the 2SA1282A.
If you find an error please send an email to mail@el-component.com