2SA1282A Bipolar Transistor

Characteristics of 2SA1282A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 150 to 800
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1282A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1282A transistor can have a current gain of 150 to 800. The gain of the 2SA1282A-E will be in the range from 150 to 300, for the 2SA1282A-F it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1282A might only be marked "A1282A".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1282A is the 2SC3242A.
If you find an error please send an email to mail@el-component.com