2N5871 Bipolar Transistor

Characteristics of 2N5871 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 115 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5871

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5871 is the 2N5873.

Replacement and Equivalent for 2N5871 transistor

You can replace the 2N5871 with the 2N5872, 2N5875, 2N5876, 2N5879, 2N5880, 2N5883, 2N5883G, 2N5884, 2N5884G, 2N6246, 2N6247, 2N6248, 2N6317, 2N6318, MJ14001, MJ14001G, MJ14003, MJ14003G, MJ2940 or MJ2941.
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