MJ14003 Bipolar Transistor

Characteristics of MJ14003 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -60 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 15 to 100
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ14003

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ14003 is the MJ14002.

Replacement and Equivalent for MJ14003 transistor

You can replace the MJ14003 with the MJ14003G.

Lead-free Version

The MJ14003G transistor is the lead-free version of the MJ14003.
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