MJ14003G Bipolar Transistor

Characteristics of MJ14003G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -60 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 15 to 100
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ14003G is the lead-free version of the MJ14003 transistor

Pinout of MJ14003G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ14003G is the MJ14002G.

Replacement and Equivalent for MJ14003G transistor

You can replace the MJ14003G with the MJ14003.
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