2N5875 Bipolar Transistor

Characteristics of 2N5875 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5875

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5875 is the 2N5877.

Replacement and Equivalent for 2N5875 transistor

You can replace the 2N5875 with the 2N5876, 2N5879, 2N5880, 2N5883, 2N5883G, 2N5884, 2N5884G, 2N6246, 2N6247, 2N6248, MJ14001, MJ14001G, MJ14003, MJ14003G, MJ2940 or MJ2941.
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