2N5876 Bipolar Transistor

Characteristics of 2N5876 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5876

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5876 is the 2N5878.

Replacement and Equivalent for 2N5876 transistor

You can replace the 2N5876 with the 2N5880, 2N5884, 2N5884G, 2N6247, 2N6248, MJ14003, MJ14003G or MJ2941.
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