2N5872 Bipolar Transistor

Characteristics of 2N5872 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 115 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5872

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5872 is the 2N5874.

Replacement and Equivalent for 2N5872 transistor

You can replace the 2N5872 with the 2N5876, 2N5880, 2N5884, 2N5884G, 2N6247, 2N6248, 2N6318, MJ14003, MJ14003G or MJ2941.
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