BC860CW Bipolar Transistor

Characteristics of BC860CW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC860CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC860CW transistor can have a current gain of 420 to 800. The gain of the BC860AW will be in the range from 110 to 220, for the BC860BW it will be in the range from 200 to 450, for the BC860W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC860CW is the BC850CW.

Replacement and Equivalent for BC860CW transistor

You can replace the BC860CW with the BC856CW, BC856W, BC857CW or BC857W.
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