BC857W Bipolar Transistor

Characteristics of BC857W Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC857W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC857W transistor can have a current gain of 110 to 800. The gain of the BC857AW will be in the range from 110 to 220, for the BC857BW it will be in the range from 200 to 450, for the BC857CW it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC857W is the BC847W.

Replacement and Equivalent for BC857W transistor

You can replace the BC857W with the BC856W or BC860W.
If you find an error please send an email to mail@el-component.com