BC850CW Bipolar Transistor

Characteristics of BC850CW Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 50 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC850CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC850CW transistor can have a current gain of 420 to 800. The gain of the BC850AW will be in the range from 110 to 220, for the BC850BW it will be in the range from 200 to 450, for the BC850W it will be in the range from 110 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC850CW is the BC860CW.

Replacement and Equivalent for BC850CW transistor

You can replace the BC850CW with the BC846CW, BC846W, BC847CW or BC847W.
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