BC860W Bipolar Transistor

Characteristics of BC860W Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC860W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC860W transistor can have a current gain of 110 to 800. The gain of the BC860AW will be in the range from 110 to 220, for the BC860BW it will be in the range from 200 to 450, for the BC860CW it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC860W is the BC850W.

Replacement and Equivalent for BC860W transistor

You can replace the BC860W with the BC856W or BC857W.
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