BC856W Bipolar Transistor

Characteristics of BC856W Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC856W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC856W transistor can have a current gain of 110 to 800. The gain of the BC856AW will be in the range from 110 to 220, for the BC856BW it will be in the range from 200 to 450, for the BC856CW it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC856W is the BC846W.
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