BC416C Bipolar Transistor

Characteristics of BC416C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 380 to 800
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of BC416C

The BC416C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC416C transistor can have a current gain of 380 to 800. The gain of the BC416 will be in the range from 180 to 800, for the BC416B it will be in the range from 180 to 460.

Complementary NPN transistor

The complementary NPN transistor to the BC416C is the BC414C.

SMD Version of BC416C transistor

The BC857 (SOT-23), BC857W (SOT-323), BC860 (SOT-23), BC860W (SOT-323), KST5087 (SOT-23) and MMBT5087 (SOT-23) is the SMD version of the BC416C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC416C transistor

You can replace the BC416C with the BC251, BC251C, BC307, BC307C, BC556, BC557 or BC560.
If you find an error please send an email to mail@el-component.com