BC307C Bipolar Transistor

Characteristics of BC307C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 380 to 800
  • Transition Frequency, min: 130 MHz
  • Noise Figure, max: 10 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of BC307C

The BC307C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC307C transistor can have a current gain of 380 to 800. The gain of the BC307 will be in the range from 120 to 800, for the BC307A it will be in the range from 120 to 220, for the BC307B it will be in the range from 180 to 460.

Complementary NPN transistor

The complementary NPN transistor to the BC307C is the BC237C.

SMD Version of BC307C transistor

The BC857 (SOT-23), BC857W (SOT-323), BC860 (SOT-23), BC860W (SOT-323), KST5087 (SOT-23) and MMBT5087 (SOT-23) is the SMD version of the BC307C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for BC307C transistor

You can replace the BC307C with the BC251, BC251C, BC416, BC416C, BC556, BC557 or BC560.
If you find an error please send an email to mail@el-component.com