BC556 Bipolar Transistor

Characteristics of BC556 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -65 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of BC556

The BC556 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC556 transistor can have a current gain of 110 to 800. The gain of the BC556A will be in the range from 110 to 220, for the BC556B it will be in the range from 200 to 450, for the BC556C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC556 is the BC546.

SMD Version of BC556 transistor

The BC856 (SOT-23) and BC856W (SOT-323) is the SMD version of the BC556 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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